Global InGaAs Avalanche Photodiodes (InGaAs-APDs) Market Research Report 2025(Status and Outlook)

The Global InGaAs Avalanche Photodiodes (InGaAs-APDs) Market Size was estimated at USD 96.99 million in 2023 and is projected to reach USD 150.52 million by 2029, exhibiting a CAGR of 7.60% during the forecast period.

Report Overview:

APD Avalanche Photodiode (APD) is a highly sensitive semiconductor electronic device that exploits the photoelectric effect to convert light to electricity. APDs can be thought of as photodetectors that provide a built-in first stage of gain through avalanche multiplication. From a functional standpoint, they can be regarded as the semiconductor analog to photomultipliers. By applying a high reverse bias voltage, APDs show an internal current gain effect due to impact ionization. However, some silicon APDs employ alternative doping and beveling techniques compared to traditional APDs that allow greater voltage to be applied before breakdown is reached and hence a greater operating gain. In general, the higher the reverse voltage, the higher the gain.

Key Company

• Hamamatsu Photonics

• OSI Optoelectronics

• Albis Optoelectronics AG (Enablence)

• First Sensor

• AMS Technologies AG

• Luna Optoelectronics

• Excelitas Technologies

• Laser Components DG, Inc.

• Kyosemi Corporation

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Market Segmentation (by Type)

• 1100 To 1700 nm

• 1000 To 1600 nm

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Market Segmentation (by Application)

• Industrial

• Medical

• Electronic

• Others

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